Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)-Reference-Cited by-同舟云学术

Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

Published:2021-06-07 Issue:7 Volume:21 Page:4023-4029
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kumar Arun¹^ORCID,Cecchini Raimondo¹^ORCID,Locatelli Lorenzo¹,Wiemer Claudia¹,Martella Christian¹^ORCID,Nasi Lucia²,Lazzarini Laura²,Mantovan Roberto¹^ORCID,Longo Massimo³^ORCID

Affiliation:

1. CNR—Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy

2. CNR—Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze, 7/A, 43124 Parma, Italy

3. CNR—Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere, 100, 00133 Rome, Italy

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00328

Reference53 articles.

1. MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

2. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

3. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

4. Bi2Te3 Nanoplates’ Selective Growth Morphology on Different Interfaces for Enhancing Thermoelectric Properties

5. Topological Insulator Materials

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