Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires-Reference-Cited by-同舟云学术

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Published:2016-09-07 Issue:10 Volume:16 Page:5781-5786
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Matteini Federico,Tütüncüoglu Gözde,Mikulik Dmitry,Vukajlovic-Plestina Jelena,Potts Heidi,Leran Jean-Baptiste,Carter W. Craig¹,Fontcuberta i Morral Anna

Affiliation:

1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

European Research Council

European Commission

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Rat der Eidgenössischen Technischen Hochschule

Schweizerische Universitätskonferenz

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00858

Reference39 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

3. Single-nanowire solar cells beyond the Shockley–Queisser limit

4. Catalyst Incorporation at Defects during Nanowire Growth

5. Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

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