Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core

Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

Published:2017-01-11 Issue:2 Volume:17 Page:474-482
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Coulon Pierre-Marie¹^ORCID,Vajargah Shahrzad hosseini²,Bao An²,Edwards Paul R.³,Le Boulbar Emmanuel D.¹,Girgel Ionut¹,Martin Robert W.³,Humphreys Colin J.²,Oliver Rachel A.²,Allsopp Duncan W. E.¹^ORCID,Shields Philip A.¹

Affiliation:

1. Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.

2. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K.

3. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, U.K.

Funder

Engineering and Physical Sciences Research Council

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b01281

Reference45 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. III–V nitride based light-emitting devices

3. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

4. Design and characterization of GaN∕InGaN solar cells

5. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

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