From Cc to P63mc: Structural Variation in La3S2Cl2[SbS3] and La3OSCl2[SbS3] Induced by the Isovalent Anion Substitution-Reference-Cited by-同舟云学术

From Cc to P6₃mc: Structural Variation in La₃S₂Cl₂[SbS₃] and La₃OSCl₂[SbS₃] Induced by the Isovalent Anion Substitution

Published:2022-01-17 Issue:2 Volume:22 Page:1437-1444
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhao Hua-Jun¹²^ORCID,Yang He-Di²,Liu Peng-Fei³^ORCID,Lin Hua²^ORCID

Affiliation:

1. School of Chemistry and Chemical Engineering, Huang Shan University, Huangshan, Anhui 245041, China

2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

3. Spallation Neutron Source Science Center, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803, China

Funder

Natural Science Foundation of Fujian Province

Huangshan University

State Key Laboratory of Structural Chemistry

National Natural Science Foundation of China

Fujian Science and Technology Innovation Laboratory for Optoelectronic Information

Key Laboratory of Quantum Optics and Quantum Optics Devices

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01405

Reference89 articles.

1. Synthesis, Structure, and Properties of a New Family of Mixed-Framework Chalcohalide Semiconductors: CdSbS2X (X = Cl, Br), CdBiS2X (X = Cl, Br), and CdBiSe2X (X = Br, I)

2. Chalcogenide Chemistry in Ionic Liquids: Nonlinear Optical Wave-Mixing Properties of the Double-Cubane Compound [Sb7S8Br2](AlCl4)3

3. Syntheses, Crystal and Electronic Structures, and Physical Properties of Two Quaternary Chalcogenides: La4FeSb2Q10 (Q = S, Se)

4. Syntheses, Crystal and Electronic Structures, and Physical Properties of Quaternary Semiconductors: Ln2Mn3Sb4S12 (Ln = Pr, Nd, Sm, Gd)

5. FexPb4−xSb4Se10: A New Class of Ferromagnetic Semiconductors with Quasi 1D {Fe2Se10} Ladders

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