On the Formation and Multiplicity of Si [001] Small Angle Symmetric Tilt Grain Boundaries: Atomistic Simulation of Directional Growth-Reference-Cited by-同舟云学术

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On the Formation and Multiplicity of Si [001] Small Angle Symmetric Tilt Grain Boundaries: Atomistic Simulation of Directional Growth

Published:2022-11-16 Issue:12 Volume:22 Page:7491-7500
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Tang Changxin¹^ORCID,Wan Wei¹²,Huang Lifang³,He Rencai⁴,Zhou Lang¹

Affiliation:

1. Institute of Photovoltaics, Nanchang University, Nanchang330031China

2. Institute for Advanced Study, Nanchang University, Nanchang330031China

3. Nanchang Jiaotong Institute, Nanchang330031, China

4. Agricultural Technology Extension Center of Jiangxi Province, Nanchang330044, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01046

Reference79 articles.

1. High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification

2. Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

3. Defect engineering in cast mono‐like silicon: A review

4. Grain Boundaries in Semiconductors

5. Computational studies of grain boundaries in covalent materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Can we predict mixed grain boundaries from their tilt and twist components?;Acta Materialia;2024-10

2. Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters;Acta Materialia;2023-12

3. Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth;Crystal Growth & Design;2023-03-23

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