Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy-Reference-Cited by-同舟云学术

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

Published:2017-10-16 Issue:12 Volume:17 Page:6297-6302
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Knoedler Moritz¹,Bologna Nicolas¹²,Schmid Heinz¹^ORCID,Borg Mattias¹³^ORCID,Moselund Kirsten E.¹,Wirths Stephan¹,Rossell Marta D.¹²,Riel Heike¹

Affiliation:

1. IBM Research-Zürich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland

2. Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland

3. Department of Electrical and Information Technology, Lund University, Box 118, SE-221 00 Lund, Sweden

Funder

H2020 LEIT Nanotechnologies

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

H2020 Marie Sklodowska-Curie Actions

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b00983

Reference26 articles.

1. Selective-area growth of III-V nanowires and their applications

2. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

3. InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth

4. Microchannel epitaxy: an overview

5. Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth Technique

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