Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics-Reference-Cited by-同舟云学术

Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics

Published:2018-06-18 Issue:8 Volume:18 Page:4287-4295
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Sallet Vincent¹^ORCID,Sartel Corinne¹,Hassani Said¹,Vilar Christèle¹,Amiri Gaelle¹,Lusson Alain¹,Jomard François¹,Galtier Pierre¹,Lefebvre Isabelle²,Delerue Christophe²^ORCID,Hamza Mohamed K.³,Canut Bruno³,Masenelli Bruno³^ORCID

Affiliation:

1. Groupe d’Etude de la Matière Condensée (GEMAC), CNRS−Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 avenue des Etats-Unis, 78035 Versailles, France

2. Université de Lille, CNRS, Centrale Lille, ISEN, Université de Valenciennes, UMR 8520-IEMN, 59000 Lille, France

3. Institut des Nanosciences de Lyon (INL-UMR5270), Université de Lyon, INSA-Lyon, ECL, UCBL, CPE, CNRS, 69621 Villeurbanne, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b00048

Reference48 articles.

1. Semiconductor nanowires