Evidence of O‐Polar (0001¯) ZnO Surfaces Induced by In Situ Ga Doping-Reference-Cited by-同舟云学术

Evidence of O‐Polar (0001¯) ZnO Surfaces Induced by In Situ Ga Doping

Published:2020-04-19 Issue:6 Volume:14 Page:2000037
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Sallet Vincent¹^ORCID,Sartel Corinne¹,Arnold Christophe¹,Hassani Said¹,Vilar Christèle¹,Amiri Gaelle¹,Lusson Alain¹,Galtier Pierre¹,Barjon Julien¹,Masenelli-Varlot Karine²,Masenelli Bruno³^ORCID

Affiliation:

1. Groupe d'Etude de la Matière Condensée (GEMAC) CNRS Université de Versailles St Quentin en Yvelines Université Paris-Saclay 45 avenue des Etats-Unis 78035 Versailles France

2. Matériaux: Ingénierie et Sciences (MATEIS, UMR 5510) Université de Lyon INSA-Lyon UCBL CNRS 69621 Villeurbanne France

3. Institut des Nanotechnologies de Lyon (INL-UMR5270) Université de Lyon INSA-Lyon ECL UCBL CPE CNRS 69621 Villeurbanne France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000037

Reference29 articles.

1. Gas sensing mechanisms of metal oxide semiconductors: a focus review

2. Recent developments of zinc oxide based photocatalyst in water treatment technology: A review

3. Effect of band gap engineering in anionic-doped TiO 2 photocatalyst

4. Chemical Sensing Applications of ZnO Nanomaterials

5. The chemistry and physics of zinc oxide surfaces

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