Molybdenum and Tungsten Di-sulfides: First Principles Investigation of Adatom Attachment and Diffusion on <i>c</i>-plane Alpha Sapphire and Correlation with Growth-Reference-Cited by-同舟云学术

Molybdenum and Tungsten Di-sulfides: First Principles Investigation of Adatom Attachment and Diffusion on c-plane Alpha Sapphire and Correlation with Growth

Published:2022-07-11 Issue:8 Volume:22 Page:4708-4720
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lalithambika Anjali¹^ORCID,Kumar V. Kranthi¹,Jain Manish²^ORCID,Raghavan Srinivasan¹

Affiliation:

1. Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India

2. Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India

Funder

Ministry of Electronics and Information technology

Nano Mission Council, Department of Science and Technology

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01454

Reference25 articles.

1. Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors

2. The growth of crystals and the equilibrium structure of their surfaces

3. Glass-assisted CVD growth of large-area MoS2, WS2 and MoSe2 monolayers on Si/SiO2 substrate

4. Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2

5. A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

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