Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis-Reference-Cited by-同舟云学术

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Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

Published:2019-03-20 Issue:5 Volume:21 Page:370-379
ISSN:2156-8952
Container-title:ACS Combinatorial Science
language:en
Short-container-title:ACS Comb. Sci.

Author:

Gomes Tiago C.¹,Kumar Dinesh²,Fugikawa-Santos Lucas³^ORCID,Alves Neri¹,Kettle Jeff²

Affiliation:

1. UNESP—São Paulo State University, School of Technology and Sciences, 19060-900 Presidente Prudente, Brazil

2. School of Electronic Engineering, Bangor University, LL57 2DG Bangor, Gwynedd, Wales, U.K.

3. UNESP—São Paulo State University, Institute of Geosciences and Exact Sciences, 13506-900 Rio Claro, Brazil

Funder

Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo

Instituto Nacional de Ci?ncia e Tecnologia em Eletr?nica Org?nica

Newton Fund

Publisher

American Chemical Society (ACS)

Subject

General Chemistry,General Medicine

Link

https://pubs.acs.org/doi/pdf/10.1021/acscombsci.8b00195

Reference37 articles.

1. Direct writing of anodic oxides for plastic electronics

2. Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure

3. Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors

4. Solution-Processable Zirconium Oxide Gate Dielectrics for Flexible Organic Field Effect Transistors Operated at Low Voltages

5. ZnO-based transparent thin-film transistors

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