Computational Study of the Gas Phase Reactions of Isopropylimido and Allylimido Tungsten Precursors for Chemical Vapor Deposition of Tungsten Carbonitride Films: Implications for the Choice of Carrier Gas-Reference-Cited by-同舟云学术

Computational Study of the Gas Phase Reactions of Isopropylimido and Allylimido Tungsten Precursors for Chemical Vapor Deposition of Tungsten Carbonitride Films: Implications for the Choice of Carrier Gas

Published:2008-11-14 Issue:23 Volume:20 Page:7246-7251
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Won Yong Sun¹,Kim Young Seok¹,Anderson Timothy J.¹,McElwee-White Lisa¹

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005, Central R&D Institute, Samsung Electro-Mechanics Co. Ltd., Suwon, Gyunggi-Do, 443-743, Korea, and Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm802173e

Reference45 articles.

1. Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system

2. Preparation of Tungsten Nitride Film by CVD Method Using WF 6

3. Integration of PECVD Tungsten Nitride as a Barrier Layer for Copper Metallization

4. “Seedless” electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices

5. WNx diffusion barriers between Si and Cu

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