Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells-Reference-Cited by-同舟云学术

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

Published:2013-07-17 Issue:15 Volume:5 Page:6984-6989
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Devulder Wouter¹,Opsomer Karl²,Seidel Felix²³,Belmonte Attilio²³,Muller Robert²,De Schutter Bob¹,Bender Hugo²,Vandervorst Wilfried²³,Van Elshocht Sven²,Jurczak Malgorzata²,Goux Ludovic²,Detavernier Christophe¹

Affiliation:

1. Department of Solid State Sciences, Universiteit Gent, Krijgslaan 281 (S1), 9000 Gent, Belgium

2. IMEC, Kapeldreef 75, 3001 Leuven, Belgium

3. Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am4010946

Reference34 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Forming and switching mechanisms of a cation-migration-based oxide resistive memory

3. Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring

4. Nanometer-scale switches using copper sulfide

5. Nanoscale Memory Elements Based on Solid-State Electrolytes

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