Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

Author:

Wei Dacheng¹²³,Peng Lan¹²,Li Menglin¹²,Mao Hongying⁴,Niu Tianchao⁴,Han Cheng³,Chen Wei³⁴,Wee Andrew Thye Shen³

Affiliation:

1. Department of Macromolecular Science, Fudan University, Shanghai 200433, China

2. State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200433, China

3. Physics Department, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore

4. Chemistry Department, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

Funder

Ministry of Education - Singapore

Government of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference49 articles.

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