N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Abstract

Negatively Doped Graphene Nanoribbons The potential applications in electronic devices of graphene (single atom, thick layers of graphite) would be even greater if it can be accessed in both p- and n-doped forms. Graphene nanoribbons (long strips only tens of nanometers in width) are readily p-doped by adsorbates from the ambient atmosphere. Wang et al. (p. 768 ) show that when graphene nano-ribbons are electrically heated in an ammonia atmosphere, nitrogen is incorporated mainly at the edges of the ribbon and creates an n-type material. Field-effect transistors that operate at room temperature can be made from this material.