Ultrafast Time-Evolution of the Nonlinear Susceptibility of Hot Carriers at the Ge(111)−GeO2 Interface As Probed by SHG
Author:
Affiliation:
1. Department of Chemistry & Surface Science Center, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp036231k
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1. Theory of channel hot-carrier degradation in MOSFETs
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