Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces-Reference-Cited by-同舟云学术

Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces

Published:2014-11-21 Issue:48 Volume:118 Page:27981-27988
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Nelson C. A.¹,Luo J.²,Jen A. K.-Y.²,Laghumavarapu R. B.³,Huffaker D. L.³,Zhu X.-Y.¹

Affiliation:

1. Department of Chemistry, Columbia University, New York, New York 10027 United States

2. Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States

3. Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095, United States

Funder

Samsung

Office of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp5094614

Reference44 articles.

1. Optical Second-Harmonic Generation as a Semiconductor Surface and Interface Probe

2. Surface properties probed by second-harmonic and sum-frequency generation

3. dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

4. Heinz, T. F.Nonlinear Surface Electromagnetic Phenomena;Ponath, H.E.; Stegeman, G. I., Eds.; Modern Problems in Condensed Matter Sciences;Elsevier:Amsterdam, 1991; Vol.29, p353.

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