Effect of Diameter Variation in a Large Set of Carbon Nanotube Transistors-Reference-Cited by-同舟云学术

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Effect of Diameter Variation in a Large Set of Carbon Nanotube Transistors

Published:2006-06-29 Issue:7 Volume:6 Page:1364-1368
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tseng Yu-Chih¹,Phoa Kinyip¹,Carlton David¹,Bokor Jeffrey¹

Affiliation:

1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl060305x

Reference19 articles.

1. Ballistic carbon nanotube field-effect transistors

2. High-Mobility Nanotube Transistor Memory

3. Extraordinary Mobility in Semiconducting Carbon Nanotubes

4. The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

5. Controlling doping and carrier injection in carbon nanotube transistors

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