Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable-Reference-Cited by-同舟云学术

Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable

Published:2008-11-12 Issue:12 Volume:8 Page:4421-4427
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Fortuna Seth A.¹,Wen Jianguo¹,Chun Ik Su¹,Li Xiuling¹

Affiliation:

1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, Frederick-Seitz Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802331m

Reference37 articles.

1. Semiconductor nanowires: optics and optoelectronics

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4. Structural properties of 〈111〉B -oriented III–V nanowires

5. MOVPE growth and real structure of vertical-aligned GaAs nanowires

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