1. Gibbs-Thomson and diffusion-induced contributions to the growth rate of si, InP, and GaAs nanowires;Dubrovskii;Phys. Rev. b.,2009
2. Ferromagnetic (ga, mn)as nanowires grown by mn-assisted molecular beam epitaxy;Bouravleuv;J. Appl. Phys.,2013
3. Advances in the theory of III–V nanowire growth dynamics, J. of phys. D;Krogstrup;Appl. Phys,2013
4. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires;Fontcuberta i Morral;Appl. Phys. Lett.,2008
5. Planar GaAs nanowires on GaAs (100) substrates: self-aligned;Fortuna;Nearly Twin-Defect Free, and Transfer-Printable, Nano Lett.,2008