Interfacial Strain Engineering in Wide-Bandgap GeS Thin Films for Photovoltaics-Reference-Cited by-同舟云学术

Interfacial Strain Engineering in Wide-Bandgap GeS Thin Films for Photovoltaics

Published:2021-06-16 Issue:25 Volume:143 Page:9664-9671
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Feng Mingjie¹²,Liu Shun-Chang¹³^ORCID,Hu Liyan¹,Wu Jinpeng¹³,Liu Xianhu²^ORCID,Xue Ding-Jiang¹³^ORCID,Hu Jin-Song¹³^ORCID,Wan Li-Jun¹³^ORCID

Affiliation:

1. Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

2. National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.1c04734

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