Investigation of the Interfaces in Schottky Diodes Using Equivalent Circuit Models
Author:
Affiliation:
1. School of Chemistry and ‡Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin, 2, Ireland
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am400963x
Reference26 articles.
1. Complex align. A technique for the characteristic locus method of design
2. Sze, S. M.; Ng, K. K.Physics of Semiconductor Devices,3rd ed.John Wiley & Sons, Inc.:Hoboken, NJ, 2007; pp134–196.
3. Deep level transient spectroscopy of hole defects in bulk‐grown p‐GaAs using Schottky barrier diodes
4. Deep level defects in n-type GaN grown by molecular beam epitaxy
5. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
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