Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon Nanotubes-Reference-Cited by-同舟云学术

Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon Nanotubes

Published:2009-03-30 Issue:5 Volume:9 Page:1866-1871
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Topinka Mark A.¹,Rowell Michael W.¹,Goldhaber-Gordon David¹,McGehee Michael D.¹,Hecht David S.¹,Gruner George¹

Affiliation:

1. Materials Science and Engineering Department, Physics Department, Stanford University, Stanford, California, Physics Department, University of California Los Angeles, Los Angeles, California, and Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl803849e

Reference46 articles.

1. Random networks of carbon nanotubes as an electronic material

2. Transparent and Flexible Carbon Nanotube Transistors

3. p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

4. Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics

5. Design Criteria for Transparent Single-Wall Carbon Nanotube Thin-Film Transistors

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