p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks-Reference-Cited by-同舟云学术

p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

Published:2004-08-26 Issue:10 Volume:4 Page:2031-2035
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhou Yangxin¹,Gaur Anshu¹,Hur Seung-Hyun¹,Kocabas Coskun¹,Meitl Matthew A.¹,Shim Moonsub¹,Rogers John A.¹

Affiliation:

1. Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, Beckman Institute, Department of Physics, Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl048905o

Reference29 articles.

1. Extraordinary Mobility in Semiconducting Carbon Nanotubes

2. High-Field Electrical Transport in Single-Wall Carbon Nanotubes

3. Ballistic carbon nanotube field-effect transistors

4. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

5. Room-temperature transistor based on a single carbon nanotube

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