Performance and Stability Enhancement of In–Sn–Zn–O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
2. Department of Materials Science and Engineering, KAIST, Daejeon 34141, Korea
Funder
LG Display
Ministry of Trade, Industry and Energy
Korea Display Research Corporation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b15419
Reference41 articles.
1. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
2. Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping
3. DC sputtered amorphous In–Sn–Zn–O thin-film transistors: Electrical properties and stability
4. Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
5. 22.1: Invited Paper: Technological Challenges for Large-Size AMOLED Display
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