Promising Approach for High-Performance MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers-Reference-Cited by-同舟云学术

Promising Approach for High-Performance MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers

Published:2017-11-07 Issue:46 Volume:9 Page:40940-40948
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Su Jie¹^ORCID,Feng Li-ping¹,Zheng Xiaoqi¹,Hu Chenlu¹,Lu Hongcheng²^ORCID,Liu Zhengtang¹

Affiliation:

1. State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China

2. Department of Physics, Duke University, Durham, North Carolina 27708, United States

Funder

National Natural Science Foundation of China

Innovation Foundation for Doctor Dissertation, Northwestern Polytechnical University

Excellent Doctorate Foundation, Northwestern Polytechnical University

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b10967

Reference61 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Effect of temperature on thermal properties of monolayer MoS2 sheet

5. Tuning the electronic properties of bondings in monolayer MoS2 through (Au, O) co-doping

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