Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors-Reference-Cited by-同舟云学术

Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

Published:2018-01-08 Issue:3 Volume:10 Page:2762-2767
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kobashi Kazuyoshi¹²,Hayakawa Ryoma¹,Chikyow Toyohiro¹,Wakayama Yutaka¹²^ORCID

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan

2. Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Japan Society for the Promotion of Science

National Institute for Materials Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14652

Reference34 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

3. Tunneling-based SRAM

4. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials

5. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

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