Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride-Reference-Cited by-同舟云学术

Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

Published:2017-03-13 Issue:11 Volume:9 Page:10296-10307
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

DuMont Jaime W.¹,Marquardt Amy E.¹,Cano Austin M.¹,George Steven M.¹^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, and ‡Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, Colorado 80309, United States

Funder

Division of Chemistry

Defense Advanced Research Projects Agency

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b01259

Reference70 articles.

1. Atomic Layer Etching: An Industry Perspective

2. TABULATED FUNCTIONS FOR HETEROGENEOUS REACTION RATES: THE ATTACK OF VITREOUS SILICA BY HYDROFLUORIC ACID

3. A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications

4. Wet chemical etching of silicate glasses in hydrofluoric acid based solutions

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