Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics-Reference-Cited by-同舟云学术

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics

Published:2017-07-31 Issue:31 Volume:9 Page:26191-26200
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ban Seok-Gyu¹^ORCID,Kim Kyung-Tae¹,Choi Byung Doo²,Jo Jeong-Wan¹,Kim Yong-Hoon³,Facchetti Antonio⁴,Kim Myung-Gil²,Park Sung Kyu¹

Affiliation:

1. School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06974, Korea

2. Department of Chemistry, Chung-Ang University, Seoul 06974, Korea

3. SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea

4. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Funder

Chung-Ang University

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b07528

Reference37 articles.

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4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

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