Interfacial Metal–Oxide Interactions in Resistive Switching Memories-Reference-Cited by-同舟云学术

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Interfacial Metal–Oxide Interactions in Resistive Switching Memories

Published:2017-05-30 Issue:22 Volume:9 Page:19287-19295
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cho Deok-Yong¹^ORCID,Luebben Michael²,Wiefels Stefan²,Lee Kug-Seung³,Valov Ilia²⁴^ORCID

Affiliation:

1. IPIT & Department of Physics, Chonbuk National University, Jeonju 54896, Korea

2. Peter Grünberg Institute (PGI-7), Research Centre Juelich, Juelich 52425, Germany

3. Pohang Accelerator Laboratory, Pohang 37673, Korea

4. Institute for Materials in Electrical Engineering II, RWTH Aachen University, Aachen 52074, Germany

Funder

Bundesministerium f?r Bildung und Forschung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b02921

Reference46 articles.

1. Resistive Switching

2. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

3. Access devices for 3D crosspoint memory

4. A scalable neuristor built with Mott memristors

5. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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