Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy-Reference-Cited by-同舟云学术

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

Published:2017-11-30 Issue:49 Volume:9 Page:43370-43376
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Matveyev Yury¹^ORCID,Negrov Dmitry¹,Chernikova Anna¹,Lebedinskii Yury¹,Kirtaev Roman¹,Zarubin Sergei¹,Suvorova Elena¹²,Gloskovskii Andrei³,Zenkevich Andrei¹

Affiliation:

1. Moscow Institute of Physics and Technology, 9, Institutskiy Lane, Dolgoprudny, Moscow region, 141701, Russia

2. A.V. Shubnikov Institute of Crystallography, Leninsky pr. 59, Moscow 119333, Russia

3. Deutsches Elektronen-Synchrotron, 85 Notkestraße, Hamburg D-22607, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14369

Reference30 articles.

1. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures