Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2–WSe2 van der Waals Heterojunction-Based Field-Effect Transistors-Reference-Cited by-同舟云学术

Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2–WSe2 van der Waals Heterojunction-Based Field-Effect Transistors

Published:2017-11-14 Issue:47 Volume:9 Page:41537-41545
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Son Seung Bae¹^ORCID,Kim Yonghun²,Kim AhRa²,Cho Byungjin³,Hong Woong-Ki¹

Affiliation:

1. Jeonju Center, Korea Basic Science Institute, Jeonju 54907, Jeollabuk-do, Republic of Korea

2. Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Gyeongnam, Republic of Korea

3. Department of Advanced Material Engineering, Chungbuk National University, Seowon-gu, Cheongju 28644, Chungbuk, Republic of Korea

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b11983

Reference63 articles.

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