Direct Observation of Current-Induced Motion of a 3D Vortex Domain Wall in Cylindrical Nanowires-Reference-Cited by-同舟云学术

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Direct Observation of Current-Induced Motion of a 3D Vortex Domain Wall in Cylindrical Nanowires

Published:2017-05-15 Issue:20 Volume:9 Page:16741-16744
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ivanov Yurii P.¹²³^ORCID,Chuvilin Andrey⁴⁵,Lopatin Sergei¹^ORCID,Mohammed Hanan¹,Kosel Jurgen¹

Affiliation:

1. King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

2. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700 Leoben, Austria

3. School of Natural Sciences, Far Eastern Federal University, 690950, Vladivostok, Russia

4. CIC nanoGUNE Consolider, Avenida de Tolosa 76, 20018 San Sebastian, Spain

5. IKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b03404

Reference26 articles.

1. IBM News Room Page.http://www-03.ibm.com/press/us/en/pressrelease/36125.wss(accessed Dec 1, 2011) .

2. Prospective of Semiconductor Memory Devices: from Memory System to Materials

3. Three-Dimensional Integration of Organic Resistive Memory Devices

4. Magnetic Domain-Wall Racetrack Memory

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1. Magnetization Dynamics of Domain Walls in Cylindrical Nanowires;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-19

2. 3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors;Nano Letters;2022-12-08

3. Current-induced zero-field domain wall depinning in cylindrical nanowires;Scientific Reports;2022-11-14

4. Dynamics of chiral domain walls under applied current in cylindrical magnetic nanowires;APL Materials;2022-11-01

5. Bilayered soft/hard magnetic nanowires as in-line writing heads;Materials & Design;2022-10

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