Ultrahigh-Gain and Fast Photodetectors Built on Atomically Thin Bilayer Tungsten Disulfide Grown by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Ultrahigh-Gain and Fast Photodetectors Built on Atomically Thin Bilayer Tungsten Disulfide Grown by Chemical Vapor Deposition

Published:2017-11-20 Issue:48 Volume:9 Page:42001-42010
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Ruilong,Feng Shanghuai,Xiang Jianyong¹^ORCID,Jia Zhiyan,Mu Congpu^ORCID,Wen Fusheng^ORCID,Liu Zhongyuan^ORCID

Affiliation:

1. Key Laboratory of Low Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, People’s Republic of China

Funder

Natural Science Foundation of Hebei Province

National Natural Science Foundation of China

Research Program of the College Science & Technology of Hebei Province

Natural Science Foundation for Distinguished Young Scholars of Hebei Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14853

Reference71 articles.

1. Photoinduced Schottky Barrier Lowering in 2D Monolayer WS 2 Photodetectors

2. Large-area synthesis of monolayer WS2and its ambient-sensitive photo-detecting performance

3. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes

4. Single-Layer MoS2 Phototransistors

5. CVD synthesis of large-area, highly crystalline MoSe2atomic layers on diverse substrates and application to photodetectors

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