Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices-Reference-Cited by-同舟云学术

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Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices

Published:2018-03-30 Issue:17 Volume:10 Page:14857-14868
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dirkmann Sven¹^ORCID,Kaiser Jan²,Wenger Christian³⁴,Mussenbrock Thomas¹

Affiliation:

1. Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, 03046 Cottbus, Germany

2. Institute of Theoretical Electrical Engineering, Ruhr University Bochum, 44780 Bochum, Germany

3. Innovations for High Performance (IHP), 15236 Frankfurt (Oder), Germany

4. Brandenburg Medical School Theodor Fontane, 16816 Neuruppin, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b19836

Reference70 articles.

1. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

2. Electrochemical metallization memories—fundamentals, applications, prospects

3. A double barrier memristive device

4. In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

5. Memristive computing devices and applications

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3. Observation and characterization of titanium-like nano-filament in TiO2 memristor using superconducting electrode(s) and Andreev spectroscopy;Journal of Applied Physics;2024-08-05

4. Implementation of edge computing using HfAlO -based memristor;Journal of Alloys and Compounds;2024-08

5. Filamentary Oxide-Based Memristors: A Journey Through Characterization, Reliability, and Applications;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

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