Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications

Published:2017-04-14 Issue:16 Volume:9 Page:14058-14066
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hong Gyu Ri¹²,Lee Sun Sook¹,Park Hye Jin¹,Jo Yejin¹,Kim Ju Young¹,Lee Hoi Sung¹,Kang Yun Chan²^ORCID,Ryu Beyong-Hwan¹,Song Aeran³,Chung Kwun-Bum³,Choi Youngmin¹,Jeong Sunho¹^ORCID

Affiliation:

1. Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Kajeongro, Daejeon 305-600, Republic of Korea

2. Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea

3. Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00524