Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Author:

Huang Wei12,Zeng Li3,Yu Xinge1,Guo Peijun4,Wang Binghao1,Ma Qing5,Chang Robert P. H.4,Yu Junsheng2,Bedzyk Michael J.3,Marks Tobin J.1,Facchetti Antonio16

Affiliation:

1. Department of Chemistry and the Materials Research Center; Northwestern University; 2145, Sheridan Road Evanston IL 60208 USA

2. State Key Laboratory of Electronic Thin Films and Integrated Devices; School of Optoelectronic Information; University of Electronic Science and Technology of China (UESTC); Chengdu 610054 China

3. Applied Physics Program and the Materials Research Center; Northwestern University; 2220 Campus Drive Evanston IL 60208 USA

4. Department of Materials Science and the Materials Research Center; Northwestern University; 2220 Campus Drive Evanston IL 60208 USA

5. DND-CAT Synchrotron Research Center APS/ANL Building; 432A, 9700 S. Cass Ave. Argonne IL 60439 USA

6. Polyera Corporation; 8045 Lamon Avenue Skokie IL 60077 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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