Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide-Reference-Cited by-同舟云学术

Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide

Published:2018-08-21 Issue:37 Volume:10 Page:31641-31647
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Whelan Patrick R.¹^ORCID,Panchal Vishal²,Petersen Dirch H.,Mackenzie David M. A.,Melios Christos²^ORCID,Pasternak Iwona³,Gallop John²,Østerberg Frederik W.⁴,U. Jepsen Peter¹,Strupinski Wlodek³,Kazakova Olga²,Bøggild Peter^ORCID

Affiliation:

1. DTU Fotonik, Technical University of Denmark, Ørsteds Plads 343, DK-2800 Kongens Lyngby, Denmark

2. National Physical Laboratory, Hampton Road, Teddington TW11 0LW, U.K.

3. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

4. Capres A/S, Diplomvej 373, DK-2800 Kongens Lyngby, Denmark

Funder

Danmarks Grundforskningsfond

Horizon 2020 Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.8b11428

Reference47 articles.

1. Graphene Epitaxy by Chemical Vapor Deposition on SiC

2. Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

3. Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)

4. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

5. Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

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