Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)-Reference-Cited by-同舟云学术

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Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)

Published:2010-10 Issue:21 Volume:312 Page:3219-3224
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hwang Jeonghyun,Shields Virgil B.,Thomas Christopher I.,Shivaraman Shriram,Hao Dong,Kim Moonkyung,Woll Arthur R.,Tompa Gary S.,Spencer Michael G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Ultrahigh electron mobility in suspended graphene

3. Large-scale pattern growth of graphene films for stretchable transparent electrodes

4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Detection of individual gas molecules adsorbed on graphene

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4. Graphene crystals grown on a SiO₂/Si substrate at low temperatures by controlling the initial nucleation and suppressing subsequent multiple nucleation;CrystEngComm;2023

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