Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene-Reference-Cited by-同舟云学术

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Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene

Published:2018-05-10 Issue:22 Volume:10 Page:18857-18862
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Journot Timotée¹²^ORCID,Bouchiat Vincent¹³,Gayral Bruno¹⁴,Dijon Jean¹⁵,Hyot Bérangère¹²

Affiliation:

1. Univ. Grenoble Alpes, 38000 Grenoble, France

2. CEA, LETI, MINATEC Campus, 38000 Grenoble, France

3. CNRS-Grenoble, Institut Néel, 38000 Grenoble, France

4. CEA, INAC-PHELIQS, 38000 Grenoble, France

5. CEA, LITEN, MINATEC Campus, 38000 Grenoble, France

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b01194

Reference37 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Graphene photonics and optoelectronics

3. Imaging of Photocurrent Generation and Collection in Single-Layer Graphene

4. Contact and edge effects in graphene devices

5. Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

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