Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device-Reference-Cited by-同舟云学术

Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device

Published:2018-07-24 Issue:32 Volume:10 Page:27454-27464
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Gao Ming,Chen Dongyun,Han Baichao,Song Wenlei,Zhou Miao,Song Xiaomin,Xu Fei,Zhao Lei,Li Yonghua,Ma Zhongquan^ORCID

Funder

National Natural Science Foundation of China

R&D Foundation of SHU-SOENs PV Joint Lab

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b07001

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4. Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells

5. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

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