Spontaneous Doping at the Polymer–Polymer Interface for High-Performance Organic Transistors-Reference-Cited by-同舟云学术

Spontaneous Doping at the Polymer–Polymer Interface for High-Performance Organic Transistors

Published:2019-03-08 Issue:13 Volume:11 Page:12709-12716
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shin Eun-Sol¹,Park Won-Tae¹,Kwon Young-Wan²,Xu Yong³,Noh Yong-Young¹^ORCID

Affiliation:

1. Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea

2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea

3. School of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b21090

Reference37 articles.

1. Organic Transistors in Optical Displays and Microelectronic Applications

2. Solution-Processed Crystalline n-Type Organic Transistors Stable against Electrical Stress and Photooxidation

3. Thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductors: Toward High-Performance, Air-Stable Organic Thin-Film Transistors

4. Doped organic transistors operating in the inversion and depletion regime

5. Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor

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