Solution-Processed Crystalline n-Type Organic Transistors Stable against Electrical Stress and Photooxidation-Reference-Cited by-同舟云学术

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Solution-Processed Crystalline n-Type Organic Transistors Stable against Electrical Stress and Photooxidation

Published:2015-11-17 Issue:14 Volume:26 Page:2365-2370
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yi Hee Taek¹,Chen Zhihua²,Facchetti Antonio²³,Podzorov Vitaly¹⁴

Affiliation:

1. Department of Physics and Astronomy; Rutgers University; Piscataway NJ 08854 USA

2. Polyera Corporation; 8025 Lamon Avenue Skokie IL 60077 USA

3. Center of Excellence for Advanced Materials Research (CEAMR); King Abdulaziz University; P.O. Box 80203 Jeddah 21589 Saudi Arabia

4. Institute for Advanced Materials and Devices for Nanotechnology (IAMDN); Rutgers University; Piscataway NJ 08854 USA

Funder

NSF

KAU

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. 25th Anniversary Article: A Soft Future: From Robots and Sensor Skin to Energy Harvesters

2. Materials for stretchable electronics

3. Organic solar cells: An overview

4. L. Carman H. P. Martinez L. Voss S. Hunter P. Beck N. Zaitseva S. Payne P. Irkhin V. Podzorov

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4. Vacuum Lamination of Polymer Gate Dielectric Layers for Facile Fabrication of Organic Transistors;ACS Applied Electronic Materials;2022-06-20

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