Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices
Author:
Funder
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b20714
Reference51 articles.
1. Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
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4. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
5. Atomically thin p–n junctions with van der Waals heterointerfaces
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