Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces-Reference-Cited by-同舟云学术

Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces

Published:2018-04-05 Issue:16 Volume:10 Page:14209-14213
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yan Hong¹^ORCID,Zhang Zhaoting¹,Wang Shuanhu¹^ORCID,Wei Xiangyang¹,Chen Changle¹,Jin Kexin¹^ORCID

Affiliation:

1. Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi’an 710072, China

Funder

National Natural Science Foundation of China

Innovation Foundation for Doctor Dissertation, Northwestern Polytechnical University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b03275

Reference53 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Charge origin and localization at then-typeSrTiO3/LaAlO3interface

3. Polar catastrophe and electronic reconstructions at theLaAlO3/SrTiO3interface: Evidence from optical second harmonic generation

4. Watch out for the lack of oxygen

5. Effect of oxygen vacancies in theSrTiO3substrate on the electrical properties of theLaAlO3∕SrTiO3interface

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