Stoichiometric Defects in Silicon Carbide-Reference-Cited by-同舟云学术

Stoichiometric Defects in Silicon Carbide

Published:2010-12-06 Issue:51 Volume:114 Page:22691-22696
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liao Ting¹,Bedoya-Martínez Olga Natalia¹,Roma Guido¹

Affiliation:

1. CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif sur Yvette, France, High-Performance Ceramic Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China, and Graduate School of Chinese Academy of Sciences, Beijing 100039, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp107372w

Reference41 articles.

1. Generation of random network models with periodic boundary conditions

2. Structure in amorphous semiconductors: Extrinsic and intrinsic

3. Structural characterization of amorphized InP: Evidence for chemical disorder

4. Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism

5. Formation and annihilation of a bond defect in silicon: Anab initioquantum-mechanical characterization

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