Theoretical Study of the Thermochemistry of Molecules in the Si−B−H−Cl System
Author:
Affiliation:
1. Sandia National Laboratories, MS 0601, P.O. Box 5800, Albuquerque, New Mexico 87185-0601
2. Sandia National Laboratories, MS 9214, P.O. Box 969, Livermore, California 94551-0969
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp971947z
Reference50 articles.
1. A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor
2. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
3. Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐ B 2 H 6 ‐ He Gas System
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