Reaction of chlorine atom with trichlorosilane from 296to473K
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2404673
Reference49 articles.
1. Analysis and Modeling of Low Pressure CVD of Silicon Nitride from a Silane‐Ammonia Mixture: II. Deposition Modeling
2. Studies of the gas-phase reactive intermediates formed by heterogeneous processes in chlorosilane chemical vapor deposition using photoelectron spectroscopy and mass spectrometry
3. Laser pyrolysis of trichlorosilene. Kinetics and mechanism
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1. Chlorination of trichlorosilane/chlorodimethylsilane using metal chlorides: experimental and mechanistic investigations;RSC Advances;2023
2. Theoretical Investigations for Kinetics of the Chemical Reactions: H + SiClx (x = 1, 2, 3);The Journal of Physical Chemistry A;2022-03-08
3. Theoretical study on the SiH4−nCln (n=0–4) reaction mechanisms for polysilicon production process;Computational and Theoretical Chemistry;2014-05
4. Theoretical Study of the Pyrolysis of Methyltrichlorosilane in the Gas Phase. 3. Reaction Rate Constant Calculations;The Journal of Physical Chemistry A;2010-01-28
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