Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates-Reference-Cited by-同舟云学术

Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

Published:2011-08-24 Issue:9 Volume:11 Page:3569-3575
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Svensson Johannes¹,Lindahl Niklas²,Yun Hoyeol³,Seo Miri³,Midtvedt Daniel⁴,Tarakanov Yury⁴,Lindvall Niclas⁵,Nerushev Oleg⁶,Kinaret Jari⁴,Lee SangWook³,Campbell Eleanor E. B.³⁶

Affiliation:

1. Electrical and Information Technology, Lund University, Box 118, SE-22100, Sweden

2. Department of Physics, University of Gothenburg, SE-41296 Gothenburg, Sweden

3. Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701, South Korea

4. Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

5. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

6. EaStCHEM, School of Chemistry, Edinburgh University, Edinburgh EH9 3JJ, Scotland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl201280q

Reference35 articles.

1. Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2. Silicon nanowire tunneling field-effect transistors

3. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

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