Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors
Author:
Affiliation:
1. Department of Physics
2. Sungkyunkwan University
3. Suwon 16419, Republic of Korea
4. School of Advanced Materials Science and Engineering
5. SKKU Advanced Institute of Nanotechnology
Abstract
Ultralow power CMOS inverter devices using axially doped p- and n-channel Si nanowire field effect transistors were successfully fabricated.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR01040G
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