Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory-Reference-Cited by-同舟云学术

Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory

Published:2018-08-30 Issue:9 Volume:1 Page:4633-4641
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Spiga Sabina¹^ORCID,Driussi Francesco²^ORCID,Congedo Gabriele¹^ORCID,Wiemer Claudia¹,Lamperti Alessio¹^ORCID,Cianci Elena¹^ORCID

Affiliation:

1. Institute for Microelectronics and Microsystems (IMM), Unit of Agrate Brianza, National Research Council of Italy (CNR), via C. Olivetti 2, Agrate Brianza 20864, Italy

2. Polytechnic Department of Engineering and Architecture (DPIA) and Interuniversity Consortium for Nanoelectronics (IU.NET), University of Udine, Udine 33100, Italy

Funder

Consiglio Nazionale delle Ricerche

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b00918

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